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- دیتاشیت MJE800G
MJE800G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MJE800G |
|---|---|
| حجم فایل | 90.328 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت MJE800G |
دانلود دیتاشیت |
|---|
سایر مستندات
MJE700-703,800-803 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi MJE800G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 40W
- Transition frequency (fT): -
- DC current gain (hFE@Vce,Ic): 750@3V,1.5A
- Collector-emitter voltage (Vceo): 60V
- Collector cut-off current (Icbo@Vcb): 100uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@1.5A,30mA
- Package: TO-225
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
- Base Part Number: MJE800
- detail: Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA